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NX5330SA-AZ

1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

CEL

California Eastern Labs

PBSS5330PA

30V,3APNPlowVCEsattransistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. NPNcomplement:PBSS4330PA. Featuresandbenefits ?Lowcollector-emittersaturatio

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5330PA

30V,3APNPlowVCEsat(BISS)transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinan ultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewith mediumpowercapability. NPNcomplement:PBSS4330PA. 2.Featuresandbenefits ?Lowcollector-emitter

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5330PAS

30V,3APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsoldarablesidepads. NPNcomplement:PBSS4330PAS Featu

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5330X

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5330X

30V,3APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT89plasticpackage. FEATURES ?SOT89(SC-62)package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration ?Reducedprinted-circuitboardrequiremen

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5330X

30V,3APNPlowVCEsat(BISS)transistor

FEATURES ?SOT89(SC-62)package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration ?Reducedprinted-circuitboardrequirements. APPLICATIONS ?Powermanagement –DC/DCconverters –Supplylines

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PH5330

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effectpowertransistorinaSOT669(LFPAK)package. Productavailability: PH5330inSOT669(LFPAK). Features ■Logiclevelcompatible ■Lowdrivecurrent ■High-densitymounting ■Verylowon-stateresistance. Applications ■DC-to-DCconve

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PH5330E

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Higheroperat

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PH5330E

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits High

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
N/A
47000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
DIODES/美臺(tái)
23+
SEAM5032
12000
原裝正品假一罰百!可開(kāi)增票!
 詢價(jià)
DIODES/美臺(tái)
22
SEAM5032
30000
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
 詢價(jià)
DIODES(美臺(tái))
23+
SMD50326P
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
DIODES/美臺(tái)
1948+
SMD
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
DIODES
18+
SMD
299
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
DIODES
23+
原裝正品現(xiàn)貨
10000
SMD
 詢價(jià)
DIODES
22+
SMD
518000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
DIODES/美臺(tái)
23+
NA
12730
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
Pericom
2010+
N/A
500
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更多NX5330SA-AZ供應(yīng)商 更新時(shí)間2025-1-26 11:06:00

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