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NX8316XC

1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA

DESCRIPTION TheNX8316XCisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFF/SFPtransceiverwithLCduplexreceptacle. FEATURES ?Internalop

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8340MD-CC

LASER DIODE

1310nmMQW-DFBLASERDIODEMODULEWITHDRIVER FOR10Gb/sAPPLICATIONS DESCRIPTION TheNX8340MD-CCisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodemodulewithaninternal driverIC.Itiscapableoftransmittingupto12kmstandardsinglemode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8341

LASER DIODE

1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES ?Internalopticalisolator ?OpticaloutputpowerPf=?2dBm ?Lowthresholdcurrentlth=8mATYP.@TC=25°C ?WideoperatingtemperaturerangeTC=?5to+85°C ?InGaAsmonitorPIN-PD

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8343

LASER DIODE

1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES ?Internalopticalisolator ?OpticaloutputpowerPf=?2dBm ?Lowthresholdcurrentlth=8mATYP.@TC=25°C ?WideoperatingtemperaturerangeTC=?5to+85°C ?InGaAsmonitorPIN-PD

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8344

LASER DIODE

1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES ?Internalopticalisolator ?OpticaloutputpowerPf=?2dBm ?Lowthresholdcurrentlth=8mATYP.@TC=25°C ?WideoperatingtemperaturerangeTC=?5to+85°C ?InGaAsmonitorPIN-PD

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8346TB

LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8346TB

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolat

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8346TS

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8346TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolator ?Optical

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8346TS

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8346TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolator ?Optical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8346TY

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolat

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NX8

  • 制造商：

    CEL

  • 制造商全稱：

    CEL

  • 功能描述：

    NECs EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
更多NX8供應(yīng)商 更新時(shí)間2025-4-3 16:45:00

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