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NX8349TB

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8349TBisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolator ?Optical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8349TB

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

CEL

California Eastern Labs

NX8349TB

LASER DIODE 1 650 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

CEL

California Eastern Labs

NX8349TB_15

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8349TB_16

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

CEL

California Eastern Labs

NX8349TS

LASERDIODE1271to1331nmAlGaInAsMQW-DFBLASERDIODEFOR40GBASE-LR4APPLICATION

CEL

California Eastern Labs

NX8349TS

LASERDIODE1310nmAlGaInAsMQW-DFBLASERDIODEFOR10Gb/sAPPLICATION

DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internaloptical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8349XK

LASERDIODE1271to1331nmAlGaInAsMQW-DFBLASERDIODEFOR40GBASE-LR4APPLICATION

CEL

California Eastern Labs

NX8349XK

LASERDIODE1310nmAlGaInAsMQW-DFBLASERDIODEFOR10Gb/sAPPLICATION

DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internaloptical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8349YK

LASERDIODE1310nmAlGaInAsMQW-DFBLASERDIODEFOR10Gb/sAPPLICATION

DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internaloptical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8349YK

LASERDIODE1271to1331nmAlGaInAsMQW-DFBLASERDIODEFOR40GBASE-LR4APPLICATION

CEL

California Eastern Labs

S8349

32watt;pin-basedCompactFluorescent;2700K;82CRI;GX24q-3(4-Pin)base

SATCO

Satco Products, Inc.

TDA8349

MultistandardIFamplifieranddemodulator

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA8349A

MultistandardIFamplifieranddemodulator

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TGA8349

GainBlockAmplifier

DESCRIPTION TheTriQuintTGA8349-SCCisaGaAsmonolithiclow-noisedistributedamplifierdesignedforuseasamulti-octavegeneral-purposegainblock.Nine122-μmgatewidthFETsprovide11-dBnominalgainand3.1-dBnoisefigurefromDCto14-GHz.Typicalpoweroutputis16-dBmat1-dB

TriQuint

TriQuint Semiconductor

TGA8349-SCC

DC-14GHzPowerAmplifier

TriQuint

TriQuint Semiconductor

TGA8349-SCC

GainBlockAmplifier

DESCRIPTION TheTriQuintTGA8349-SCCisaGaAsmonolithiclow-noisedistributedamplifierdesignedforuseasamulti-octavegeneral-purposegainblock.Nine122-μmgatewidthFETsprovide11-dBnominalgainand3.1-dBnoisefigurefromDCto14-GHz.Typicalpoweroutputis16-dBmat1-dB

TriQuint

TriQuint Semiconductor

詳細(xì)參數(shù)

  • 型號(hào):

    NX8349TB

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NDK
6000
面議
19
DIP/SMD
詢價(jià)
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
NEC
13+
5118
原裝分銷
詢價(jià)
NEC原裝
22+23+
TOSA
27322
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
NEC原裝
1704+
TOSA
14930
只做原裝現(xiàn)貨、主營(yíng)光電元器件/門市現(xiàn)貨
詢價(jià)
NEC
24+
TOSA
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
NEC
2310+
TOSA
4860
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
詢價(jià)
更多NX8349TB供應(yīng)商 更新時(shí)間2025-1-11 15:13:00