首頁(yè) >OAT-10050M>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NylonPCBSupports-ImperialSpacing | HeycoHeyco. 海科???Heyco) | Heyco | ||
InductiveSensor Features ■?6.5mm,smoothbarrel ■Stainlesssteel,1.4404 ■DC2-wire,nom.8.2VDC ■Outputacc.toDINEN60947-5-6(NAMUR) ■Cableconnection ■ATEXcategoryII1G,Exzone0 ■ATEXcategoryII1D,Exzone20 ■SIL2(LowDemandMode)acc.toIEC61508, PLcacc.toISO13849-1withHFT0 | TURCKTurck Inc. 圖爾克德國(guó)圖爾克集團(tuán)公司 | TURCK | ||
5.0ASURFACEMOUNTSCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣諾電子淄博圣諾電子工程有限公司 | ZSELEC | ||
10050ExtremeCompatibleTransceiverSFP10/100/1000Base-T(RJ45,Copper,100m) Features ATGBICS10050SFPoperatesonstandardCategory5unshieldedtwisted-paircoppercablingoflinklengthsupto100m. Extreme1000BASE-TSFPmodulessupport10/100/1000autonegotiationandautoMDI/MDIX. OurproductmeetsthespecificationofExtreme10050=andweproudlyofferacompa | ATGBICS ATGBICS by Approved Technology | ATGBICS | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltage PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?IdenticalSpecific | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
10.3x10.3mmMax.square,5.0mmMax.height. | Toko TOKO, Inc | Toko | ||
ELECTROLYTIC-85?C | DUBILIER dubilier | DUBILIER | ||
SURFACEMOUNTSMD-105CLOWIMPEDANCEDVJL | DUBILIER dubilier | DUBILIER | ||
SMD-105?CLOWIMPEDANCE | DUBILIER dubilier | DUBILIER | ||
ELECTROLYTIC105?CREDUCEDSIZE | DUBILIER dubilier | DUBILIER |
詳細(xì)參數(shù)
- 型號(hào):
OAT-10050M
- 制造商:
TE Connectivity
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Y1221-1397G001 |
24+ |
9 |
詢價(jià) | ||||
SIGMALINKS |
23+ |
-10 |
8890 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢 |
詢價(jià) | ||
SIGMA |
21+ |
fiber |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SIGMA |
22+ |
fiber |
3000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
Fujikura |
10Tray |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
SIGMA |
23+ |
fiber |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
SIGMA |
23+ |
N/A |
10000 |
只有原裝 |
詢價(jià) | ||
SIGMALINKS |
2310+ |
-10 |
3886 |
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價(jià) | ||
OKI |
23+ |
SMD |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
22+ |
TSOP8S |
3629 |
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電! |
詢價(jià) |
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