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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
OKY2105	文件：259.17 Kbytes Page：1 Pages	PROTOSHIELD CON BORNERAS Description: ForArduinoProtoScrewshieldsAssembledprototypeterminalexpansionboardProvideterminalforArduino10,convenientportconnection3.81terminalquality,reliable,convenientanddurableWithProtoshields,canbeusedasaprototypeextensionplateinthemiddlePrototypeexte	AGELECTRONICA AG Electronica	AGELECTRONICA
PCF2105	文件：289.01 Kbytes Page：48 Pages	LCDcontroller/driver GENERALDESCRIPTION ThePCF2105integratedcircuitissimilartothePCF2114x(describedinthe“PCF2116family”datasheet)butdoesnotcontainthehighvoltagegeneratorofthatdevice. Furthermore,afastI2C-businterface(400kHz)isprovided. ThePCF2105isoptimizedforchip-on-gl	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PCF2105MU	文件：289.01 Kbytes Page：48 Pages	LCDcontroller/driver GENERALDESCRIPTION ThePCF2105integratedcircuitissimilartothePCF2114x(describedinthe“PCF2116family”datasheet)butdoesnotcontainthehighvoltagegeneratorofthatdevice. Furthermore,afastI2C-businterface(400kHz)isprovided. ThePCF2105isoptimizedforchip-on-gl	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PLM2105DR	文件：1.38329 Mbytes Page：25 Pages	LM2105105-V,0.5-A/0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr	TITexas Instruments 德州儀器美國(guó)德州儀器公司	TI
PLM2105DR	文件：1.21212 Mbytes Page：28 Pages	LM2105105-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr	TITexas Instruments 德州儀器美國(guó)德州儀器公司	TI
PLM2105DR	文件：2.26393 Mbytes Page：32 Pages	LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent	TITexas Instruments 德州儀器美國(guó)德州儀器公司	TI
PLM2105DSGR	文件：1.38329 Mbytes Page：25 Pages	LM2105105-V,0.5-A/0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr	TITexas Instruments 德州儀器美國(guó)德州儀器公司	TI
PM2105	文件：834.37 Kbytes Page：4 Pages	1WATTRFICPOWERAMPLIFIER800TO2000MHZOPERATION	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
PTFA2105	文件：333.05 Kbytes Page：2 Pages	Verticallevelsensor	CELDUCcelduc Relais 凡紀(jì)繼電器凡紀(jì)繼電器（上海）有限公司	CELDUC
PV2105	文件：651.89 Kbytes Page：2 Pages	Wide-Input,SynchronousBuckDigitalControllerwithAuto-Control&SMBus??PMBus??forUSB-PD	ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán)	ROHM
RF2105	文件：70.27 Kbytes Page：8 Pages	HIGHPOWERLINEARUHFAMPLIFIER ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa	RFMD RF Micro Devices	RFMD
RF2105L	文件：70.27 Kbytes Page：8 Pages	HIGHPOWERLINEARUHFAMPLIFIER ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa	RFMD RF Micro Devices	RFMD
RF2105LPCBA	文件：70.27 Kbytes Page：8 Pages	HIGHPOWERLINEARUHFAMPLIFIER ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa	RFMD RF Micro Devices	RFMD
RN2105	文件：256.73 Kbytes Page：7 Pages	TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications Built-inbiasresistors Simplifiedcircuitdesign Fewerpartsandsimplifiedmanufacturingprocess ComplementarytoRN1101~RN1106	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
RN2105	文件：572.07 Kbytes Page：8 Pages	SiliconPNPEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
RN2105	文件：559.29 Kbytes Page：8 Pages	Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications Built-inbiasresistors Simplifiedcircuitdesign Fewerpartsandsimplifiedmanufacturingprocess ComplementarytoRN1101~RN1106	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
RN2105ACT	文件：196.37 Kbytes Page：8 Pages	Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications ?Extrasmallpackage(CST3)isapplicableforextrahighdensityfabrication. ?Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablethemanufactureofevermor	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
RN2105CT	文件：195.31 Kbytes Page：8 Pages	SwitchingApplicationsInverterCircuitApplicationsInterfaceCircuitApplicationsDriverCircuitApplications SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications ?Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablethemanufactureofevermorecompactequipmentandsaveassemblycost	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
RN2105MFV	文件：206.92 Kbytes Page：8 Pages	Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Ultra-smallpackage,suitedtoveryhighdensitymounting Incorporatingabiasresistorintothetransistorreducesthenumberofparts,soenablingthemanufactureofevermorecompactequipmentandlowering	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
RSZ-2105	文件：89.09 Kbytes Page：2 Pages	1WattSMDMiniatureIsolatedSingleOutput	RECOM Recom International Power	RECOM

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	OKY2-T	MURATA/村田	23+		46746	原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢(xún)價(jià)
深圳兆威電子有限公司	OKY2-T/10-D12N-C	MURATA/村田	23+		28	原裝現(xiàn)貨假一賠十	詢(xún)價(jià)
深圳市昊創(chuàng)電子有限公司	OKY2-T/10-D12N-C	MURATA/村田	18+	SMD	288000	原裝正品價(jià)格優(yōu)勢(shì)	詢(xún)價(jià)
深圳市盈宏半導(dǎo)體科技有限公司	OKY2-T/10-D12N-C	Murata	15+	SMD	28	剛到現(xiàn)貨加微13425146986	詢(xún)價(jià)
深圳市科恒偉業(yè)電子有限公司	OKY2-T/10-D12N-C	MURATA/村田	22+		9852	只做原裝正品現(xiàn)貨,或訂貨假一賠十!	詢(xún)價(jià)
深圳市艾宇欣科技有限公司	OKY2-T/10-D12N-C	Murata	1941+	N/A	909	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢(xún)價(jià)
深圳市科雨電子有限公司	OKY2-T/10-D12N-C	MURATA	20+	電源模塊	335	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢(xún)價(jià)
深圳市安富世紀(jì)電子有限公司	OKY2-T/10-D12N-C	Murata Power Solutions	23+	SMD	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳市易訊博科技有限公司	OKY2-T/10-D12N-C	Murata	22+	NA	909	加我QQ或微信咨詢(xún)更多詳細(xì)信息,	詢(xún)價(jià)
深圳企栗科技有限公司	OKY2-T/10-D12N-C		21+	N/A	2152	全新原裝虧本出	詢(xún)價(jià)

更多OKY2105供應(yīng)商更新時(shí)間2025-1-10 16:21:00

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