首頁 >OM10045,598>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7?isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7?bysignificantlyloweringRDS(ON)andQg.PowerMOS7?combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7?isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7?bysignificantlyloweringRDS(ON)andQg.PowerMOS7?combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7?isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7?bysignificantlyloweringRDS(ON)andQg.PowerMOS7?combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconPowerSchottkyDiode Features ?HighSurgeCapability ?Typesfrom45Vto100VVRRM ?IsolatedtoPlate ?NotESDSensitive | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | ||
SchottkyPowerMod SchottkyPowerMod ●SchottkyBarrierRectifier ●GuardRingforReverseProtection ●Lowforwardvoltage ●VRRM30to45Volts ●Electricallyisolatedbase ●ReverseEnergyTested ●Centertap ●ROHSCompliant | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100AmpRectifier20to100VoltsSchottkyBarrier Features ?Metalofsiliconrectifier,majontycarrierconducton ?Guardringfortransientprotection ?Lowpowerlosshighefficiency ?Highsurgecapacity,Highcurrentcapability | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
SCHOTTKYDIODESMODULETYPE100A 100AmpRectifier20-100Volts Features ?HighSurgeCapability ?TypesUpto100VVRRM | TEL TRANSYS Electronics Limited | TEL | ||
SiliconPowerSchottkyDiode | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | ||
SchottkyPowerMod | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SCHOTTKYDIODESMODULETYPE100A | TEL TRANSYS Electronics Limited | TEL | ||
NPNSiliconPowerDarlingtonTransistor 25KVAENERGYMANAGEMENTSERIERSSWITCHMODEDARLINGTONTRANSISTORS25,50and100AmpereOperatingCurrent | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
NPNSILICONPOWERDARLINGTONTRANSISTOR 25KVAENERGYMANAGEMENTSERIERSSWITCHMODEDARLINGTONTRANSISTORS25,50and100AmpereOperatingCurrent | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RuggedEnvironmentConnector | AMPHENOLAmphenol Corporation 安費諾集團(tuán)美國安費諾集團(tuán) | AMPHENOL |
詳細(xì)參數(shù)
- 型號:
OM10045,598
- 功能描述:
開發(fā)板和工具包 - ARM MCB213x
- RoHS:
否
- 制造商:
Arduino
- 產(chǎn)品:
Development Boards
- 工具用于評估:
ATSAM3X8EA-AU
- 核心:
ARM Cortex M3
- 接口類型:
DAC, ICSP, JTAG, UART, USB
- 工作電源電壓:
3.3 V
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NXP/恩智浦 |
23+ |
46800 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
NXP |
24+ |
原廠封裝 |
2906 |
優(yōu)勢現(xiàn)貨 |
詢價 | ||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
NEXPERIA/安世 |
24+ |
NA |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
新 |
2174 |
全新原裝 貨期兩周 |
詢價 | ||||
2022+ |
2170 |
全新原裝 貨期兩周 |
詢價 | ||||
NXP |
24+ |
2 |
詢價 | ||||
NXP |
22+ |
NA |
30000 |
100%全新原裝 假一賠十 |
詢價 | ||
NXP |
23+ |
原廠封裝 |
13528 |
振宏微原裝正品,假一罰百 |
詢價 |
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