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首頁 >OM5175HL>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
ACE5175X	文件：255.9 Kbytes Page：4 Pages	7V600mA75dBHighPSRR,HighSpeedLDO	ACE ACE Technology Co., LTD.	ACE
ACE5175XBNH	文件：255.9 Kbytes Page：4 Pages	7V600mA75dBHighPSRR,HighSpeedLDO	ACE ACE Technology Co., LTD.	ACE
AD5175	文件：1.033619 Mbytes Page：20 Pages	Single-Channel,1024-Position,DigitalRheostatwithI2CInterfaceand50-TPMemory	ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司	AD
BX5175	文件：73.67 Kbytes Page：1 Pages	RFAMPLIFIERMODEL	APITECH API Technologies Corp	APITECH
C5175G	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
C5175K	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
C5175V	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
CEB5175	文件：503.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB5175	文件：683.38 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED5175	文件：274 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23m?@VGS=-10V. RDS(ON)=28m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED5175	文件：269.98 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP5175	文件：503.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP5175	文件：683.38 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU5175	文件：274 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23m?@VGS=-10V. RDS(ON)=28m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU5175	文件：269.98 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEZ5175	文件：535.62 Kbytes Page：5 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-48A,RDS(ON)=23mW@VGS=-10V. RDS(ON)=28mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
EL5175	文件：753.55 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
EL5175	文件：337.26 Kbytes Page：16 Pages	550MHzDifferentialLineReceivers	Intersil Intersil Corporation	Intersil
EL5175	文件：441.12 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	Intersil Intersil Corporation	Intersil
EL5175IS	文件：441.12 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	Intersil Intersil Corporation	Intersil

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市昌和盛利電子有限公司	OM5175HL	PHILIPS	23+	N/A	12300		詢價(jià)
深圳市一線半導(dǎo)體有限公司	OM5175HL	PHILIPS	24+	QFP48	1843		詢價(jià)
深圳市益百分電子有限公司	OM5175HL	PHI	99+	QFP48	2110	全新原裝進(jìn)口自己庫存優(yōu)勢(shì)	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	OM5175HL	PHI	2016+	QFP48	6528	只做進(jìn)口原裝現(xiàn)貨!或訂貨,假一賠十!	詢價(jià)
上海專毅電子科技有限公司	OM5175HL	PHI	17+	QFP48	9988	只做原裝進(jìn)口,自己庫存	詢價(jià)
艾睿國際（香港）有限公司	OM5175HL	PHI	2021+	QFP	100500	一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	OM5175HL	PHILIPS/飛利浦	23+	QFP48	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳廊盛科技有限公司	OM5175HL	PHILIPS/飛利浦	2022	QFP48	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	OM5175HL	PHILIPS/飛利浦	23+	QFP	46800	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市威雅利發(fā)展有限公司	OM5175HL	PHI	1999	QFP	20	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)

更多OM5175HL供應(yīng)商更新時(shí)間2025-1-15 10:09:00

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