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OY123KE

包裝：卷帶（TR） 封裝/外殼：軸向 類別：電阻器 通孔式電阻器 描述：RES 12K OHM 10% 2W AXIAL

OHMITEOHMITE MANUFACTURING COMPANY

歐敏歐敏電阻制造公司

P123

PASSIVATEDASSEMBLEDCIRCUITELEMENTS

Description TheP100seriesofIntegratedPowerCircuitsconsistsofpowerthyristorsandpowerdiodesconfiguredinasinglepackage.Withitsisolatingbaseplate,mechanicaldesignsaregreatlysimplifiedgivingadvantagesofcostreductionandreducedsize. Applicationsincludepowersuppli

IRF

International Rectifier

P123

PATENTEDGOLDMETALLIZEDSILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications. SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetim

Polyfet

Polyfet RF Devices

P123

PASSIVATEDASSEMBLEDCIRCUITELEMENTS

Description TheP100seriesofIntegratedPowerCircuitsconsistsofpowerthyristorsandpowerdiodesconfiguredinasinglepackage.Withitsisolatingbaseplate,mechanicaldesignsaregreatlysimplifiedgivingadvantagesofcostreductionandreducedsize. Applicationsincludepowersuppli

IRF

International Rectifier

P123

PassivatedAssembledCircuitElements,25A

DESCRIPTION TheP100seriesofintegratedpowercircuitsconsistsofpowerthyristorsandpowerdiodesconfiguredinasinglepackage.Withitsisolatingbaseplate,mechanicaldesignsaregreatlysimplifiedgivingadvantagesofcostreductionandreducedsize. Applicationsincludepowersupplie

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

P123K

PASSIVATEDASSEMBLEDCIRCUITELEMENTS

Description TheP100seriesofIntegratedPowerCircuitsconsistsofpowerthyristorsandpowerdiodesconfiguredinasinglepackage.Withitsisolatingbaseplate,mechanicaldesignsaregreatlysimplifiedgivingadvantagesofcostreductionandreducedsize. Applicationsincludepowersuppli

IRF

International Rectifier

PA123

NOISESUPPRESSIONCAPACITOR

OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD.

岡谷電機(jī)工業(yè)株式會(huì)社

PA123-L

NOISESUPPRESSIONCAPACITOR

OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD.

岡谷電機(jī)工業(yè)株式會(huì)社

PBRN123E

NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123E

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123E_SER

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123EK

NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123EK

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ES

NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123ES

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123ET

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    OY123KE

  • 制造商：

    Ohmite

  • 類別：

    電阻器 > 通孔式電阻器

  • 系列：

    OY

  • 包裝：

    卷帶（TR）

  • 容差：

    ±10%

  • 功率 (W)：

    2W

  • 成分：

    陶瓷

  • 特性：

    防潮，脈沖耐受

  • 溫度系數(shù)：

    -1000/ -1600ppm/°C

  • 工作溫度：

    -40°C ~ 220°C

  • 封裝/外殼：

    軸向

  • 供應(yīng)商器件封裝：

    軸向

  • 大小 / 尺寸：

    0.276" 直徑 x 0.748" 長（7.00mm x 19.00mm）

  • 描述：

    RES 12K OHM 10% 2W AXIAL

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Ohmite
2010+
N/A
654
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 詢價(jià)
OHMITE
20+
電阻器
2683
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
原廠
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來電咨詢
 詢價(jià)
新
974
全新原裝 貨期兩周
 詢價(jià)
2022+
970
全新原裝 貨期兩周
 詢價(jià)
Arcol Ohmite
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
OHMITERoH
23+
NA
633
專做原裝正品,假一罰百!
 詢價(jià)
更多OY123KE供應(yīng)商 更新時(shí)間2025-1-11 10:18:00

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