P10N60CAFJ中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

SVFP10N60CAFJ/FJH is an N-channel enhancement mode power

MOS field effect transistor which is produced using Silan proprietary

F-CellTM high-voltage planar VDMOS technology. The improved

process and cell structure have been especially tailored to minimize

on-state resistance, provide superior switching performance, and

withstand high energy pulse in the avalanche and commutation

mode.

These devices are widely used in AC-DC power supplies, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

? 10A, 600V, RDS(on)(typ.)=0.60?@VGS=10V

? Low gate charge

? Low Crss

? Fast switching

? Improved dv/dt capability