P10NK80ZFP中文資料意法半導體數據手冊PDF規(guī)格書

Description

These devices are N-channel Zener-protected

Power MOSFETs developed using

STMicroelectronics' SuperMESH? technology,

achieved through optimization of ST's well

established strip-based PowerMESH? layout. In

addition to a significant reduction in onresistance, this device is designed to ensure a

high level of dv/dt capability for the most

demanding applications.

Features

■ Extremely high dv/dt capability

■ 100 avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeability

Applications

■ Switching application