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HMS15N80F

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFC15N80Q

HiPerFETISOPLUS220MOSFETQ-ClassElectricallyIsolatedBackSurface

IXYS

IXYS Corporation

IXFC15N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFH15N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N80Q

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFR15N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR15N80Q

HiPerFETPowerMOSFETsISOPLUS247QClass

HiPerFET?PowerMOSFETsISOPLUS247?QClass(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -

IXYS

IXYS Corporation

IXFT15N80Q

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
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ST
TO-220
36900
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ST
22+
TO-220
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價
FC
2018+
TO-220
1560
詢價
ST
22+
TO-220
66900
原廠原裝現(xiàn)貨
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ST
24+
TO-220
200000
原裝進(jìn)口正口,支持樣品
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ST/意法
23+
TO-220F
56688
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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STM
2016+
TO220
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價
STM
2016+
TO220
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
ST/進(jìn)口原
17+
TO-220
6200
詢價
更多P15N80供應(yīng)商 更新時間2025-2-2 11:00:00