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19N10

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCUnisonic Technologies

友順友順科技股份有限公司

19N10

100VN-ChannelMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

19N10G

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCUnisonic Technologies

友順友順科技股份有限公司

19N10G-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCUnisonic Technologies

友順友順科技股份有限公司

19N10L

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCUnisonic Technologies

友順友順科技股份有限公司

19N10L-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCUnisonic Technologies

友順友順科技股份有限公司

19N10V

100VN-ChannelMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

FQB19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQB19N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB19N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

供應商型號品牌批號封裝庫存備注價格
ST
23+
TO-210
16900
正規(guī)渠道,只有原裝!
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ST
TO-210
36900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
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ST
22+
TO-210
16900
支持樣品 原裝現(xiàn)貨 提供技術支持!
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S
23+
TO-220
10000
公司只做原裝正品
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S
TO-220
22+
6000
十年配單,只做原裝
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S
23+
TO-220
6000
原裝正品,支持實單
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ST
22+
TO-220
66900
原廠原裝現(xiàn)貨
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ST
24+
TO-220
200000
原裝進口正口,支持樣品
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ST/意法
23+
TO-220
56688
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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24+
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1
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更多P19N10供應商 更新時間2025-2-1 16:30:00