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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
1SMB5926	文件：218.46 Kbytes Page：6 Pages	3W,11V-200VSurfaceMountSiliconZenerDiodes	TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司	TSC
1SMB5926	文件：227.15 Kbytes Page：3 Pages	SURFACEMOUNTSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-1.5Watts FEATURES ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●TypicalIRlessthan1Aabove11V ●Hightemperaturesoldering:260/10s	TRSYS Transys Electronics	TRSYS
1SMB5926	文件：87.07 Kbytes Page：3 Pages	SURFACEMOUNTSILICONZENERDIODE(VOLTAGE-11TO200VoltsPower-1.5Watts) FEATURES ?Forsurfacemountedapplicationsinordertooptimizeboardspace. ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan1.0μAabove12V ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?	PANJITPan Jit International Inc. 強茂股份有限公司	PANJIT
1SMB5926	文件：236.37 Kbytes Page：4 Pages	3.0WSurfaceMountSiliconZenerDiode Features ◇Forsurfacemountedapplicationsinordertooptimizeboardspace ◇Lowprofilepackage ◇Built-instrainrelief ◇Glasspassivatedjunction ◇Lowinductance ◇Hightemperaturesolderingguaranteed:260°C/10secondsatterminals ◇PlasticpackagehasUnderwritersLaboratoryFla	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司	LUGUANG
1SMB5926	文件：331.68 Kbytes Page：4 Pages	3.0WattsSurfaceMountSiliconZenerDiode FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Lowinductance -ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21definition	TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司	TSC
1SMB5926	文件：58.68 Kbytes Page：4 Pages	SURFACEMOUNTSILICONZENERDIODE FEATURES ?Forsurfacemountedapplicationsinordertooptimizeboardspace. ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan1.0μAabove12V ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?	PANJITPan Jit International Inc. 強茂股份有限公司	PANJIT
1SMB5926	文件：59.5 Kbytes Page：4 Pages	SURFACEMOUNTSILICONZENERDIODE FEATURES ?Forsurfacemountedapplicationsinordertooptimizeboardspace. ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIRlessthan1.0μAabove12V ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?	PANJITPan Jit International Inc. 強茂股份有限公司	PANJIT
1SMB5926	文件：85.15 Kbytes Page：4 Pages	GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES	PANJITPan Jit International Inc. 強茂股份有限公司	PANJIT
1SMB5926	文件：654.94 Kbytes Page：4 Pages	3.0WattsSurfaceMountSiliconZenerDiode	TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司	TSC
1SMB5926	文件：128.949 Kbytes Page：5 Pages	SURFACEMOUNTSILICONZENERDIODE	PANJITPan Jit International Inc. 強茂股份有限公司	PANJIT
1SMB5926A	文件：46.9 Kbytes Page：2 Pages	SILICONZENERDIODES	EIC EIC discrete Semiconductors	EIC
1SMB5926A	文件：36.54 Kbytes Page：2 Pages	CompleteVoltageRange3.3to200Volts FEATURES: CompleteVoltageRange3.3to200Volts Highpeakreversepowerdissipation Highreliability Lowleakagecurrent	DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司	DGNJDZ
1SMB5926A	文件：1.66595 Mbytes Page：5 Pages	SMBKPlastic-EncapsulateDiodes Features ●Pd1.5W ●Vz3.3V-200V Applications ●StabilizingVoltage	HDSEMIJiangsu High diode Semiconductor Co., Ltd 蘇海德半導體蘇海德半導體有限公司	HDSEMI
1SMB5926A	文件：189.81 Kbytes Page：2 Pages	SiliconZenerDiodes Features CompleteVoltageRange3.3to200Volts Highpeakreversepowerdissipation Highreliability Lowleakagecurrent	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司	LUGUANG
1SMB5926A	文件：500.48 Kbytes Page：5 Pages	CompleteVoltageRange3.3to200Volts	BWTECH Bruckewell Technology LTD	BWTECH
1SMB5926A	文件：409.38 Kbytes Page：4 Pages	3WSURFACEMOUNTZENERDIODE Features ●CompleteVoltageRange3.3to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣諾電子淄博圣諾電子工程有限公司	ZSELEC
1SMB5926A	文件：478.31 Kbytes Page：2 Pages	ZenerDiodes3W Features ●Glasspassivatedchip ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lowreverseleakage ●Foruseinstabilizingandclipping withhighpowerrating ●RoHScompliant MechanicalData ●Case:DO214AAMoldedplastic ●Lead:SolderableperM	LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司	LEIDITECH
1SMB5926A	文件：189.29 Kbytes Page：4 Pages	1.5WattPlasticSurfaceMountSiliconZenerDiodes 1.5WattPlasticSurfaceMountSiliconZenerDiodes PLASTICSURFACEMOUNTZENERDIODES1.5WATTS3.3-200VOLTS	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
1SMB5926A	文件：15.97 Kbytes Page：2 Pages	SILICONZENERDIODES FEATURES: CompleteVoltageRange3.3to200Volts Highpeakreversepowerdissipation Highreliability Lowleakagecurrent	EIC EIC discrete Semiconductors	EIC
1SMB5926A	文件：500.253 Kbytes Page：2 Pages	1.5W11VZenerdiode	SUNMATESUNMATE electronic Co., LTD 森美特森美特半導體股份有限公司 PDF上傳者：深圳市福田區(qū)吉富昌電子商行	SUNMATE

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市粵駿騰電子科技有限公司	P1SMB5926B	PRISEMI/芯導	24+	SMB	900000	原裝進口特價	詢價
深圳市科恒偉業(yè)電子有限公司	P1SMB5939BT3G	ON	1715+	SOP	251156	只做原裝正品現(xiàn)貨假一賠十!	詢價
貿澤芯城（深圳）電子科技有限公司	P1SMB5948B	PRISEMI/芯導	23+	SMB	57800	原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價

更多P1SMB5926B供應商更新時間2025-1-6 16:06:00

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