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P25Q06LA-WFH-KT

Ultra Low Power, 2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-NXH-IR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-NXH-IT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-NXH-IW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-NXH-IY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-NXH-KR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-NXH-KT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-NXH-KW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-NXH-KY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-SSH-IR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-SSH-IT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-SSH-IW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-SSH-IY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-SSH-KR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-SSH-KT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-SSH-KW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06U-SSH-KY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PUYA/普冉
2024+
SOP-8
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價(jià)
普冉
23+
SOP
59600
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
PUYA
18+
SOP8
193
全新原裝只做自己庫(kù)存只做原裝
 詢價(jià)
PUYA/普冉
2023
TSSOP8盤
3392
原廠代理渠道,正品保障
 詢價(jià)
PURA
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
PURA
2022
SOP8
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
PURA
21+
SOP8
9866
詢價(jià)
PURA
22+
SOP8
34430
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
PURA
23+
SOP-8
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
PURA
23+
NA/
15050
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
更多P25Q06LA-WFH-KT供應(yīng)商 更新時(shí)間2024-12-24 11:24:00

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