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P25Q11LA-NXH-KT

Ultra Low Power, 2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-NXH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-NXH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SSH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SSH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SSH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SSH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SSH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SSH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SSH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SSH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SUH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SUH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SUH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SUH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SUH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SUH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SUH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11LA-SUH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q11U-NXH-IR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
PUYA/普冉
2024+
SOP-8
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價
PUYA/普冉
2023
DFN8盤
2939
原廠代理渠道,正品保障
 詢價
PUYA(普冉)
23+
SOP8 208mil
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價
普冉(PUYA)
2117+
WSON-8
315000
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
普冉(PUYA)
2021+
WSON-8
499
詢價
PUYA
22+
WSON8
37440
只做原裝低價甩賣假一罰萬
 詢價
PUYA
24+
con
100
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index
 詢價
普冉PUYA
23+
SOP-8
59647
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
PUYA/普冉
24+23+
SOP8
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
 詢價
PUYA
23+
SOP-8
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
更多P25Q11LA-NXH-KT供應(yīng)商 更新時間2024-11-17 9:00:00

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