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P25T22LA-UXH-IY中文資料普冉數(shù)據(jù)手冊(cè)PDF規(guī)格書

P25T22LA-UXH-IY
廠商型號(hào)

P25T22LA-UXH-IY

功能描述

Ultra Low Power, 2M/1M-bit Serial Standard and Dual I/O Flash Memory Datasheet

文件大小

1.4011 Mbytes

頁面數(shù)量

45

生產(chǎn)廠商 Puran Semiconductor (Shanghai) Co., Ltd
企業(yè)簡稱

PUYA普冉

中文名稱

普冉半導(dǎo)體(上海)股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-2-3 9:32:00

P25T22LA-UXH-IY規(guī)格書詳情

2 Description

The P25T22L/12L is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices.

The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density.

Specifically designed for use in many different systems, the device supports read, program, and erase operations with a wide supply voltage range of 1.65V to 2.0V. No separate voltage is required for programming and erasing.

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