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P3NK60Z

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

P3NK60ZFP

N-channel600V,3.2Ωtyp.,2.4ASuperMESH?PowerMOSFETsinD2PAK,IPAK,DPAK,TO-220andTO-220FPpackages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH?technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH?.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STB3NK60Z

N-CHANNEL600V-3.3ohm-2.4ATO-220/FP/D2PAK/DPAK/IPAKZener-ProtectedSuperMESH??owerMOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STD3NK60Z

N-CHANNEL600V-3.3ohm-2.4ATO-220/FP/D2PAK/DPAK/IPAKZener-ProtectedSuperMESH??owerMOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STD3NK60Z

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

STD3NK60ZD

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

STD3NK60ZD

N-channel600V,3.3廓,2.4A,DPAKSuperFREDMesh??PowerMOSFET

Description TheSuperFREDMesh?seriesassociatesalladvantagesofreducedon-resistance,Zenergateprotectionandveryhighdv/dtcapabilitywithafastbody-drainrecoverydiode.Suchseriescomplementsthe“FDmesh?”advancedtechnology. Features ■100avalanchetested ■Extremelyhighdv/d

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STD3NK60ZFP

N-CHANNEL600V-3.3ohm-2.4ATO-220/FP/D2PAK/DPAK/IPAKZener-ProtectedSuperMESH??owerMOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STP3NK60Z

N-CHANNEL600V-3.3ohm-2.4ATO-220/FP/D2PAK/DPAK/IPAKZener-ProtectedSuperMESH??owerMOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STP3NK60Z

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

STP3NK60Z

N-channel600V,3.2Ωtyp.,2.4ASuperMESH?PowerMOSFETsinD2PAK,IPAK,DPAK,TO-220andTO-220FPpackages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH?technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH?.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STP3NK60ZFP

N-channel600V,3.2Ωtyp.,2.4ASuperMESH?PowerMOSFETsinD2PAK,IPAK,DPAK,TO-220andTO-220FPpackages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH?technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH?.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STP3NK60ZFP

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

STP3NK60ZFP

N-CHANNEL600V-3.3ohm-2.4ATO-220/FP/D2PAK/DPAK/IPAKZener-ProtectedSuperMESH??owerMOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

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36900
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20+
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38560
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S
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更多P3NK60PVC供應(yīng)商 更新時(shí)間2024-11-12 7:45:00