零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
P50N03A | N-Channel 30 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor [Niko-Sem] | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel30V(D-S)MOSFET FEATURES ?TrenchFET?powerMOSFET ?Packagewithlowthermalresistance ?100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel30V(D-S)MOSFET FEATURES ?TrenchFET?powerMOSFET ?Packagewithlowthermalresistance ?100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
30VN-CHANNELENHANCEMENTMODEMOSFET | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
進(jìn)口原裝 |
23+ |
TO-220 |
3000 |
全新原裝 |
詢價(jià) | ||
N |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
N |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
N |
23+ |
TO-220 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
N |
24+ |
TO-TO-220 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
NIKO |
24+ |
TO-252 |
100000 |
詢價(jià) | |||
NIKO |
22+ |
原廠原封 |
8200 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價(jià) | ||
NIKO |
TO-252 |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
NIKO |
12+ |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | |||
NIKOS |
2016+ |
TO-252 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) |
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