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50N05E

TMOSIVPOWERFIELDEFFECTTRANSISTORS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTH50N05E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTM50N05

TMOSIVPOWERFIELDEFFECTTRANSISTORS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM50N05E

TMOSIVPOWERFIELDEFFECTTRANSISTORS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N05E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP50N05EL

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

OM50N05SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

OM50N05ST

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

RFG50N05

50A,50V,0.022Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFET’SmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingr

Intersil

Intersil Corporation

RFG50N05L

50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs

Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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ST
23+
TO220
1985
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23+
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16900
正規(guī)渠道,只有原裝!
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ST
21+
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23480
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ST
TO-220
1000
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17+
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6200
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22+23+
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43563
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20+
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38560
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24+
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1000
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3000
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50000
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更多P50N05L供應(yīng)商 更新時(shí)間2025-3-6 16:45:00