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NCP605MN50T2G

Marking：P605500；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP605MNADJT2G

Marking：P605ADJ；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP606MN15T2G

Marking：P606150；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP606MN18T2G

Marking：P606180；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP606MN25T2G

Marking：P606250；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP606MN28T2G

Marking：P606280；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP606MN30T2G

Marking：P606300；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP606MN33T2G

Marking：P606330；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP606MN50T2G

Marking：P606500；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP606MNADJT2G

Marking：P606ADJ；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

晶體管資料

  • 型號(hào)：

    P6009

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-P+Darl

  • 性質(zhì)：

    低頻或音頻放大 （LF）_開(kāi)關(guān)管 （S）_功率放大 （L

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    25V

  • 最大電流允許值：

    1A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號(hào)：

    BD262,BD466(A...B),BD676,BD876,BDX45,

  • 最大耗散功率：

    5W

  • 放大倍數(shù)：

    β>4000

  • 圖片代號(hào)：

    B-21

  • vtest：

    25

  • htest：

    999900

  • atest：

    1

  • wtest：

    5

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    P60

  • 制造商：

    Skyworks Solutions Inc.

  • 類(lèi)別：

    開(kāi)發(fā)板，套件，編程器 > 評(píng)估和演示板及套件

  • 包裝：

    散裝

  • 類(lèi)型：

    接口

  • 功能：

    以太網(wǎng)

  • 使用的 IC/零件：

    P60

  • 所含物品：

    板

  • 描述：

    IEEE 1588 PROTO BOARD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
JST/日壓
2508+
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391805
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COSEL
13+
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1353
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23+
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420
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NIKOS
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
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G.S
05+
原廠原裝
91
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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TI
25+
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96
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TYCO
23+
模塊
3562
詢價(jià)
24+
5000
公司存貨
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NIKO-SEM
2016+
SOT23-6
2200
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更多P60供應(yīng)商 更新時(shí)間2025-5-5 10:12:00

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