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P8NA50中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

P8NA50
廠(chǎng)商型號(hào)

P8NA50

功能描述

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

文件大小

205.77 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠(chǎng)商 STMicroelectronics
企業(yè)簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

中文名稱(chēng)

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2025-1-11 20:00:00

P8NA50規(guī)格書(shū)詳情

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

■ TYPICAL RDS(on) = 0.7 ?

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100oC

■ LOW INTRINSIC CAPACITANCES

■ GATE GHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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23+
NA/
13249
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3866
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ST
20+
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38560
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ST
TO-220
36900
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ST
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TO220
70967
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16900
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6200
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16900
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10000
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