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GAL22V10D-10LJ

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJ

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJN

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJN

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LJNI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LP

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL22V10D-10LP

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

供應商型號品牌批號封裝庫存備注價格
CYP
23+
PALCE22V10D-
13528
振宏微原裝正品,假一罰百
詢價
CYPRESS
2020+
PLCC
350000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
CYPRESS
22+
PLCC
4918
原裝現(xiàn)貨
詢價
CYPRESS
23+
PLCC
8000
只做原裝現(xiàn)貨
詢價
CYPRESS
23+
PLCC
7000
詢價
Lattice
24+
5000
公司存貨
詢價
LATTICE
24+
PLCC
2978
100%全新原裝公司現(xiàn)貨供應!隨時可發(fā)貨
詢價
CYPRESS
23+
NA
6500
全新原裝假一賠十
詢價
Lttice
22+
PLCC
3000
原裝現(xiàn)貨
詢價
Lttice
2023+
PLCC
50000
原裝現(xiàn)貨
詢價
更多PALCE22V10D-10LMB供應商 更新時間2024-12-31 17:06:00