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PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitt

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitte

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollect

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160PANPS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160PANS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits ?Verylowcollector-

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160QA-Q

60V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-Mounted Device(SMD)plasticpackagewithvisibleandsolderablesidepads. 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapabi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160T

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiency,reducesheatgeneration ?Reducesprint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

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23+
SC-74
3022
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SC-74
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1809+
SOT-457
6675
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SOT457
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NXP
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NA
45000
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SMD
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100
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更多PBSS4160DSH供應(yīng)商 更新時(shí)間2025-1-21 23:00:00

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