PCF85116-3P/01集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

Description

The PCF85116-3 is an 16 kbits (2048 × 8-bit) floating gate Electrically Erasable Programmable Read Only Memory (EEPROM). By using redundant EEPROM cells it is fault tolerant to single bit errors. In most cases multi bit errors are also covered. This feature dramatically increases reliability compared to conventional EEPROM memories. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier.

Features

■ Low power CMOS:

◆ maximum operating current 1.0 mA

◆ maximum standby current 10 μA (at 5.5 V), typical 4 μA

■ Non-volatile storage of 16 kbits organized as eight blocks of 256 × 8-bit each

■ Single supply with full operation down to 2.7 V

■ On-chip voltage multiplier

■ Serial input/output I2C-bus (100 kbit/s standard-mode and 400 kbit/s fast-mode)

■ Write operations: multi byte write mode up to 32 bytes

■ Write-protection input

■ Read operations:

◆ sequential read

◆ random read

■ Internal timer for writing (no external components)

■ Power-on reset

■ High reliability by using redundant EEPROM cells

■ Endurance: 1000000 Erase/Write (E/W) cycles at Tamb = 22 °C

■ 20 years non-volatile data retention time (minimum)

■ Pin and address compatible to the PCx85xxC-2 family

■ ESD protection exceeds 2000 V HBM per JESD22-A114, 200 V MM per JESD22-A115 and 1000 V CDM per JESD22-C101

■ Latch-up testing is done to JESDEC Standard JESD78 which exceeds 100 mA

■ Offered in DIP and SO packages