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PDB-V115

包裝:散裝 封裝/外殼:TO-5 變體,2 引線,透鏡頂金屬罐 類別:傳感器,變送器 光學(xué)傳感器 - 光電二極管 描述:SENSOR PHOTODIODE 950NM TO5

ADVANCEDPHOTONIX

Advanced Photonix, Inc.

PDTA115E

PNPresistor-equippedtransistors;R1=100kW,R2=100kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA115E

PNPresistor-equippedtransistors;R1=100k廓,R2=100k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA115E

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115E_SERIES

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115EE

PNPresistor-equippedtransistors;R1=100kW,R2=100kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA115EE

PNPresistor-equippedtransistors;R1=100k廓,R2=100k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA115EE

NPNresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115EE

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115EEF

PNPresistor-equippedtransistors;R1=100kW,R2=100kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA115EEF

PNPresistor-equippedtransistors;R1=100k廓,R2=100k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA115EEF

NPNresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115EEF

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115EK

PNPresistor-equippedtransistors;R1=100kW,R2=100kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA115EK

PNPresistor-equippedtransistors;R1=100k廓,R2=100k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA115EK

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115EK

NPNresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115EM

PNPresistor-equippedtransistors;R1=100kW,R2=100kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA115EM

PNPresistor-equippedtransistors;R1=100k廓,R2=100k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA115EM

NPNresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    PDB-V115

  • 制造商:

    Advanced Photonix

  • 類別:

    傳感器,變送器 > 光學(xué)傳感器 - 光電二極管

  • 包裝:

    散裝

  • 波長(zhǎng):

    950nm

  • 顏色 - 增強(qiáng):

    藍(lán)色

  • 頻譜范圍:

    350nm ~ 1100nm

  • 二極管類型:

    引腳

  • 響應(yīng)時(shí)間:

    500ns

  • 電流 - 暗(典型值):

    250pA

  • 有效面積:

    5.07mm2

  • 視角:

    73°

  • 工作溫度:

    -40°C ~ 125°C

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-5 變體,2 引線,透鏡頂金屬罐

  • 描述:

    SENSOR PHOTODIODE 950NM TO5

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
LUNA
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
詢價(jià)
ADVANCEDPHOTONIXINC
23+
DIPSMD
95501
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
ADVANCEDPHOTONIX
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
LUNA
20+
傳感器
4796
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
24+
N/A
78000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
更多PDB-V115供應(yīng)商 更新時(shí)間2025-1-11 15:00:00