PDM41024SA12TSOATR中文資料ETC數(shù)據(jù)手冊PDF規(guī)格書

[Paradigm-Technology]

Description

The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. Writing is accomplished when the write enable (WE) and the chip enable (CE1) inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE and CE2 remain HIGH and CE1 and OE are both LOW.

Features

□ High-speed access times

Com’l: 10, 12 and 15 ns

Ind’l: 12 and 15 ns

□ Low power operation (typical)

- PDM41024SA

Active: 450 mW

Standby: 50 mW

- PDM41024LA

Active: 400 mW

Standby: 25mW

□ Single +5V (±10) power supply

□ TTL-compatible inputs and outputs

□ Packages

Plastic SOJ (300 mil) - TSO

Plastic SOJ (400 mil) - SO

Plastic TSOP (I)- T