PDRV8162LDGSR中文資料德州儀器數(shù)據(jù)手冊PDF規(guī)格書

1 Features

? Drives two N-channel MOSFETs in half-bridge

configuration

– High-side MOSFET source/drain up to 102V

(absolute max)

– 8V (5V DRV8162L) to 20V gate drive power

supply

– Integrated bootstrap diode

? 16-level gate drive peak current

– 16mA - 1000mA source current

– 32mA - 2000mA sink current

– Source-sink current ratio 1:1, 1:2, 1:3

? Adjustable PWM dead time insertion 20ns - 400ns

? Robust design for motor phase (SH) switching

– Slew rate 20V/ns

– Negative transient voltage -20V

– 2-A strong gate pull down

? Split gate drive supply inputs for redundant

shutdown (DRV8162, DRV8162L)

? Low-offset current sense amplifier (DRV8161)

– Adjustable gain (5, 10, 20, 40 V/V)

? Flexible PWM control interface; 2-pin PWM, and

independent PWM mode

? 13-level VDS over current threshold

? Independent shutdown pin (nDRVOFF)

? Gate driver soft shutdown sequence

? Integrated protection features

– GVDD under voltage (GVDDUV)

– Bootstrap under voltage (BST_UV)

– MOSFET over current protection (VDS)

– Shoot through protection

– Thermal shutdown (OTSD)

– Fault condition indicator (nFAULT)

? Supports 3.3V, and 5V Logic Inputs

2 Applications

? Industrial & collaborative robot

? Mobile robot (AGV/AMR)

? Linear motor transport systems

? Servo Drives

? Drones

? E-Bikes, E-Scooters, E-Mobility

3 Description

The DRV816x devices are half-bridge gate drivers

capable of driving high-side and low-side N-channel

MOSFETs. The gate drive voltages are generated

from the GVDD supply pin and the integrated

bootstrap circuit is used to drive the high-side

FET up to 102V drain. The Smart Gate Drive

architecture supports 16-level (48 combination) gate

drive peak current up to 1A source and 2A sink,

and a built-in timing control of gate drive current.

The devices can be used to drive various types of

loads including brushless/brushed DC motors, PMSM,

stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply

undervoltage, FET over-current, and die over

temperature. The nFAULT pin indicates fault events

detected by the protection features. The nDRVOFF

pin initiates power stage shutdown independent from

PWM control. The DRV8162 and DRV8162L devices

offer split power supply architecture to assist safe

torque off (STO) function.

Many device parameters including gate drive current,

dead time, PWM control interface, and over current

detection are configurable with a few passive

components connected to device pins. An integrated

low-side current sense amplifier (DRV8161) provides

current measurement information back to the

controller.