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PDTA143E

PNP resistor-equipped transistors; R1 = 4.7 k-ohm, R2 = 4.7 k-ohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143E

PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA143E

PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143E_SER

PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143E_SER

PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EE

PNP resistor-equipped transistor

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EE

PNP resistor-equipped transistors; R1 = 4.7 k-ohm, R2 = 4.7 k-ohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EE

PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA143EE

PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EEF

PNP resistor-equipped transistors; R1 = 4.7 k-ohm, R2 = 4.7 k-ohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EEF

PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA143EK

PNP resistor-equipped transistor

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EK

PNP resistor-equipped transistors; R1 = 4.7 k-ohm, R2 = 4.7 k-ohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EK

PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA143EM

PNP resistor-equipped transistors; R1 = 4.7 k-ohm, R2 = 4.7 k-ohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EM

PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA143EM

PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EMB

PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQA

50 V, 100 mA PNP resistor-equipped transistors

Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■reducedpickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQA

50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    PDTA143E

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
3000
公司存貨
詢價
PHILIPS
22+
SOT-323
4897
絕對原裝!現(xiàn)貨熱賣!
詢價
PHI
13+
SOT-423
15000
特價熱銷現(xiàn)貨庫存
詢價
PHILIPS
99+
SOT-23
3300
全新原裝現(xiàn)貨100真實自己公司
詢價
NXP
2020+
SOT-23
27000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
PHILIPS
17+
0603
6200
100%原裝正品現(xiàn)貨
詢價
PH
23+
TO-92
5000
原裝正品,假一罰十
詢價
NXP
2016+
SOT-323
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
NXP
16+
NA
8800
誠信經(jīng)營
詢價
PH
2339+
sot23
5989
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
詢價
更多PDTA143E供應(yīng)商 更新時間2024-11-15 16:00:00