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PDTA143EEF

PNPresistor-equippedtransistors;R1=4.7k-ohm,R2=4.7k-ohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EEF

PNPresistor-equippedtransistors;R1=4.7k廓,R2=4.7k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA143EK

PNPresistor-equippedtransistor

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EK

PNPresistor-equippedtransistors;R1=4.7k-ohm,R2=4.7k-ohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EK

PNPresistor-equippedtransistors;R1=4.7k廓,R2=4.7k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA143EM

PNPresistor-equippedtransistors;R1=4.7k-ohm,R2=4.7k-ohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA143EM

PNPresistor-equippedtransistors;R1=4.7k廓,R2=4.7k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA143EM

PNPresistor-equippedtransistors;R1=4.7k?,R2=4.7k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EMB

PNPresistor-equippedtransistor;R1=4.7k廓,R2=4.7k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQA

50V,100mAPNPresistor-equippedtransistors

Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■reducedpickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQA

50V,100mANPNresistor-equippedtransistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQA

50V,100mAPNPresistor-equippedtransistors

Featuresandbenefits ?100mAoutputcurrentcapability ?built-inbiasresistors ?simplifiescircuitdesign ?reducescomponentcount ?reducedpickandplacecosts ?lowpackageheightof0.37mm ?AEC-Q101qualified ?suitableforAutomaticOpticalInspection (AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQA

50V,100mAPNPresistor-equippedtransistors

1.1Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQA_SER

50V,100mAPNPresistor-equippedtransistors

Featuresandbenefits ?100mAoutputcurrentcapability ?built-inbiasresistors ?simplifiescircuitdesign ?reducescomponentcount ?reducedpickandplacecosts ?lowpackageheightof0.37mm ?AEC-Q101qualified ?suitableforAutomaticOpticalInspection (AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQB

50V,100mANPNresistor-equippedtransistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQB

50V,100mAPNPresistor-equippedtransistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQB_SER

50V,100mAPNPresistor-equippedtransistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQB-Q

50V,100mAPNPresistor-equippedtransistors

1.Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinanultrasmallDFN1110D-3(SOT8015) leadlessSurface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEDEC NPNcomplement: PDTA14

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQB-Q

50V,100mANPNresistor-equippedtransistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?QualifiedaccordingtoAEC-Q

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA143EQB-Q_SER

50V,100mAPNPresistor-equippedtransistors

1.Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinanultrasmallDFN1110D-3(SOT8015) leadlessSurface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEDEC NPNcomplement: PDTA14

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    PDTA143EE T/R

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
Nexperia
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
NXP USA Inc.
24+
SC-75 SOT-416
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
PHILIPS/飛利浦
1535+
35263
詢價
PHILIPS/飛利浦
23+
35263
全新原裝,歡迎來電咨詢
詢價
PHILIPS
22+
SOT523
12000
進(jìn)口原裝
詢價
NXP
22+
NA
45000
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
PHILIPS/飛利浦
23+
SOT-523
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
PHILIPS/飛利浦
2022
SOT-523
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
PHILIPS
24+
23
3000
公司存貨
詢價
NXP
2016+
SOT-23
6523
房間原裝進(jìn)口現(xiàn)貨假一賠十
詢價
更多PDTA143EE T/R供應(yīng)商 更新時間2024-11-15 15:00:00