PDTB113ET

Marking：7U；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ

Featuresandbenefits *500mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance *AEC-Q101qualified

PDTB113ET

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTB113ET

Low VCEsat (BISS) transistors

PDTB113ET

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

PDTB113ET,215

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.

PDTB113EU

500mA,50VPNPresistor-equippedtransistors

Generaldescription PNPResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitd

PDTB113EU

500mA,50VNPNresistor-equippedtransistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

PDTB113EU

500mA,50VPNPresistor-equippedtransistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

PDTB113Z

PNP500mA,50Vresistor-equippedtransistors;R1=1k廓,R2=10k廓

PDTB113Z_SER

50V,500mAPNPresistor-equippedtransistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

PDTB113ZK

LowVCEsat(BISS)transistors

PDTB113ZK

PNP500mA,50Vresistor-equippedtransistors;R1=1k廓,R2=10k廓

PDTB113ZQA

50V,500mANPNresistor-equippedtransistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB113ZQA

50V,500mAPNPresistor-equippedtransistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB113ZQA

50V,500mAPNPresistor-equippedtransistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

PDTB113ZQA_SER

50V,500mAPNPresistor-equippedtransistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB113ZS

PNP500mA,50Vresistor-equippedtransistors;R1=1k廓,R2=10k廓

PDTB113ZT

LowVCEsat(BISS)transistors

PDTB113ZT

PNP500mA,50Vresistor-equippedtransistors;R1=1k廓,R2=10k廓

PDTB113ZT

PNP500mA,50Vresistor-equippedtransistor;R1=1kΩ,R2=10kΩ

1.Generaldescription 500mAPNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-Mounted Device(SMD)plasticpackage. NPNcomplement:PDTD113ZT. 2.Featuresandbenefits ?500mAoutputcurrentcapability ?Reducespickandplacecosts ?Built-inbiasresistors ?