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PDTC123E

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123E

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123E

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123E_SERIES

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EE

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123EE

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EE

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EEF

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123EEF

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EEF

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EK

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123EK

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EK

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EM

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123EM

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EM

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123EMB

NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA123EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123ES

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123ES

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123ES

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    PDTC123E

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 NPN W/RES 50V

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP
13+
SOT23
180000
特價熱銷現(xiàn)貨庫存
詢價
PHILIPS
24+
5000
有部份現(xiàn)貨
詢價
NXP
24+
SOT23
6980
原裝現(xiàn)貨,可開13%稅票
詢價
NXP
24+
SOT523
5000
只做原裝公司現(xiàn)貨
詢價
NXP
2020+
SOT23
5000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
NXP
1715+
SOP
251156
只做原裝正品現(xiàn)貨假一賠十!
詢價
NXP
23+
NA
1916
專做原裝正品,假一罰百!
詢價
NXP
10+
MA
6000
絕對原裝自己現(xiàn)貨
詢價
NEXPERIA/安世
19+
20000
向鴻專營TI ADI,代理渠道可訂貨
詢價
NXP
20+
SOT-523
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
更多PDTC123E供應(yīng)商 更新時間2024-11-15 14:10:00