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PDTC143Z

NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143Z

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143Z

NPN resistor-equipped transistors; R1 = 4.7 k?, R2 = 47 k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143Z_SER

NPN resistor-equipped transistors; R1 = 4.7 k?, R2 = 47 k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143ZE

NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143ZE

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143ZE

Marking:38;Package:SC-75;NPN resistor-equipped transistors; R1 = 4.7 k?, R2 = 47 k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143ZEF

NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143ZEF

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143ZK

NPN resistor-equipped transistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143ZK

NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143ZK

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143ZM

NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143ZM

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143ZM

NPN resistor-equipped transistors; R1 = 4.7 k?, R2 = 47 k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143ZMB

Marking:00010110;Package:DFN1006B-3;NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA143ZMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■Reducespick

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143ZQA

Marking:110011;Package:DFN1010D-3;50 V, 100 mA NPN resistor-equipped transistors

Generaldescription 100mANPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducedpickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143ZQA

Marking:110011;Package:DFN1010D-3;50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143ZQA

50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143ZQB

50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    PDTC143Z

  • 制造商:

    PHILIPS

  • 制造商全稱(chēng):

    NXP Semiconductors

  • 功能描述:

    NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
DISCRETE
3000
PH3
945000
詢(xún)價(jià)
PHILIPS
24+
5000
有部份現(xiàn)貨
詢(xún)價(jià)
NXP
23+
SOT-23
60000
原裝正品,假一罰十
詢(xún)價(jià)
NXP
2016+
SOT-323
3500
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
詢(xún)價(jià)
NXP
23+
SOT-23
6680
全新原裝優(yōu)勢(shì)
詢(xún)價(jià)
PRISEMI
24+
SOT-723
5000
全現(xiàn)原裝公司現(xiàn)貨
詢(xún)價(jià)
NXP
1708+
SOT416
7500
只做原裝進(jìn)口,假一罰十
詢(xún)價(jià)
PHILIPS
2020+
SOT23
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢(xún)價(jià)
Nexperia
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
詢(xún)價(jià)
NXP
17+
SOT416
9888
全新原裝現(xiàn)貨
詢(xún)價(jià)
更多PDTC143Z供應(yīng)商 更新時(shí)間2025-1-20 9:02:00