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PDTD123ET

Marking：-7T；Package：SOT-23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTD123ET

Marking：-7T；Package：SOT-23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTD123ET

Marking：7T；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD123ET

Marking：7T；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. PNPcomplement:PDTB123ET 2.Featuresandbenefits ?Built-inbiasresistors ?Simplifiescircuitdesign ?500mAoutputcurrentcapability ?Reducescomponentcou

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD123ET

Marking：-7T；Package：SOT-23；Low VCEsat (BISS) transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTD123ET-Q

Marking：7T；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. PNPcomplement:PDTB123ET-Q 2.Featuresandbenefits ?Built-inbiasresistors ?Simplifiescircuitdesign ?500mAoutputcurrentcapability ?Reducescomponentc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD123ET,215

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V TO236AB

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

PDTD123EU

500mA,50VNPNresistor-equippedtransistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitd

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD123EU

500mA,50VNPNresistor-equippedtransistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD123EU

500mA,50VPNPresistor-equippedtransistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    PDTD123ET

  • 制造商：

    NXP Semiconductors

  • 功能描述：

    TRANSISTOR NPN 50V 0.5A SOT-23

  • 功能描述：

    NPN Transistor,500mA,PDTD123ET

  • 功能描述：

    Transistor NPN 50V 0.5A 2.2K 2.2K TO236

供應(yīng)商型號品牌批號封裝庫存備注價格
NEXPERIA
22+
NA
518000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
NXP/恩智浦
2021+
NA
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
NXP/恩智浦
19+
NA
24000
詢價
Nexperia
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
Nexperia/安世
22+
SOT23
360000
原廠原裝正品現(xiàn)貨
 詢價
NXP
20+
SMD
11520
特價全新原裝公司現(xiàn)貨
 詢價
NXP/恩智浦
24+
SMD
3000
原裝現(xiàn)貨
 詢價
NXP/恩智浦
22+
NA
20000
深圳原裝現(xiàn)貨正品有單價格可談
 詢價
NEXPERIA/安世
2447
SOT-23
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
NXP/恩智浦
21+
NA
24000
原裝現(xiàn)貨假一賠十
 詢價
更多PDTD123ET供應(yīng)商 更新時間2025-2-22 17:02:00

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