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PF38F5070M0T1C0中文資料NUMONYX數(shù)據(jù)手冊PDF規(guī)格書
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Introduction
This datasheet contains information about the Numonyx? Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.
Product Features
? High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 μs/word ?
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability?
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX? IX Process
— 130 nm ETOX? VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 μs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 μA (typ.)
— Read current: 8 mA (4-word burst, typ.)
產(chǎn)品屬性
- 型號:
PF38F5070M0T1C0
- 制造商:
NUMONYX
- 制造商全稱:
Numonyx B.V
- 功能描述:
StrataFlash㈢ Cellular Memory
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INTEL |
2020+ |
BGA |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
INTEL/英特爾 |
23+ |
NA/ |
50 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
AD |
2022+ |
SOIC-18 |
6000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
INTEL/英特爾 |
22+ |
BGA |
16800 |
全新進(jìn)口原裝現(xiàn)貨,假一罰十 |
詢價 | ||
INTEL/英特爾 |
23+ |
FBGA |
6850 |
只做原廠原裝正品現(xiàn)貨!假一賠十! |
詢價 | ||
INTEL |
23+ |
BGA |
124 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
INTEL |
1741+ |
BGA |
6528 |
只做進(jìn)口原裝正品假一賠十! |
詢價 | ||
INTEL/英特爾 |
21+ |
BGA |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
INTEL |
24+ |
BGA |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
INTEL/英特爾 |
21+ |
FBGA |
231 |
原裝現(xiàn)貨假一賠十 |
詢價 |