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PF48F4400P0Z0W0中文資料NUMONYX數(shù)據(jù)手冊(cè)PDF規(guī)格書

PF48F4400P0Z0W0
廠商型號(hào)

PF48F4400P0Z0W0

功能描述

StrataFlash? Cellular Memory

文件大小

2.1332 Mbytes

頁(yè)面數(shù)量

139 頁(yè)

生產(chǎn)廠商 numonyx
企業(yè)簡(jiǎn)稱

NUMONYX

中文名稱

numonyx官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2024-12-24 22:58:00

PF48F4400P0Z0W0規(guī)格書詳情

Introduction

This datasheet contains information about the Numonyx? Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.

Product Features

? High Performance Read-While-Write/Erase

— Burst frequency at 66 MHz (zero wait states)

—60ns Initial access read speed

— 11 ns Burst mode read speed

— 20 ns Page mode read speed

— 4-, 8-, 16-, and Continuous-Word Burst mode reads

— Burst and Page mode reads in all Blocks, across all partition boundaries

— Burst Suspend feature

— Enhanced Factory Programming at 3.1 μs/word ?

Security

—128-BitOTP Protection Register:

64 unique pre-programmed bits + 64 user-programmable bits

— Absolute Write Protection with VPP at ground

— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability?

Quality and Reliability

—Temperature Range:–40 °C to +85 °C

— 100K Erase Cycles per Block

— 90 nm ETOX? IX Process

— 130 nm ETOX? VIII Process

Architecture

— Multiple 4-Mbit partitions

— Dual Operation: RWW or RWE

— Parameter block size = 4-Kword

— Main block size = 32-Kword

— Top or bottom parameter devices

—16-bit wide data bus

Software

— 5 μs (typ.) Program and Erase Suspend latency time

— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible

— Programmable WAIT signal polarity

Packaging and Power

— 90 nm: 32- and 64-Mbit in VF BGA

— 130 nm: 32-, 64-, and 128-Mbit in VF BGA

— 130 nm: 128-Mbit in QUAD+ package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

—VCC= 1.70 V to 1.95 V

—VCCQ(90 nm) = 1.7 V to 1.95 V

—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V

—VCCQ(130 nm) = 1.35 V to 2.24 V

— Standby current (130 nm): 8 μA (typ.)

— Read current: 8 mA (4-word burst, typ.)

產(chǎn)品屬性

  • 型號(hào):

    PF48F4400P0Z0W0

  • 制造商:

    NUMONYX

  • 制造商全稱:

    Numonyx B.V

  • 功能描述:

    StrataFlash? Cellular Memory

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
INTEL
2016+
FBGA105
9000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
詢價(jià)
INTEL
23+
BGA
20000
原廠原裝正品現(xiàn)貨
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Micron
1844+
BGA
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
Micron
22+
SMD
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
只做原裝
21+
BGA
36520
一級(jí)代理/放心采購(gòu)
詢價(jià)
MICRON/美光
22+
NA
8000
中賽美只做原裝 只有原裝
詢價(jià)
INTEL
24+
BGA
2568
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨
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INTEL
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
INTEL
22+
FBGA105
5000
全新原裝現(xiàn)貨!價(jià)格優(yōu)惠!可長(zhǎng)期
詢價(jià)
Micron
17+
6200
詢價(jià)