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PHB10N40

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB10N40

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB10N40T

N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHP10N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP10N40E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP10N60Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX10N40E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX10N40Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

SIF10N40E

N-CHANNELPOWERMOSFET

SISEMICShenzhen SI Semiconductors Co.,LTD.

深愛半導(dǎo)體深圳深愛半導(dǎo)體股份有限公司

SIHB10N40D

DSeriesPowerMOSFET

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit(

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB10N40D

DSeriesPowerMOSFET

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF10N40D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHF10N40D

DSeriesPowerMOSFET

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircui

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP10N40D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHP10N40D

Lowareaspecificon-resistance

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SSFP10N40

StarMOSTPowerMOSFET

VDSS=400V ID25=10A RDS(ON)=0.53Ω Description StarMOSisanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimisestheJFETeffect,increasespackingdensityandreducestheon-resistance.StarMOSalsoachievesfasterswitchingspee

Good-Ark

GOOD-ARK Electronics

SZ-10N40

TransientVoltageSuppressor

SankenSanken electric

三墾三墾電氣株式會社

WSF10N40

N-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微碩半導(dǎo)體微碩半導(dǎo)體（深圳）有限公司

詳細(xì)參數(shù)

  • 型號：

    PHB10N40

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    PowerMOS transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
PHILIPS/飛利浦
24+
5000
只做原廠渠道 可追溯貨源
 詢價
PHILIPS
23+
TO-263(D2PAK
3500
專業(yè)優(yōu)勢供應(yīng)
 詢價
NXP
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
PHILIPS
2020+
SOT404(D2PAK)
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
FAGOR
23+
TO220F
69820
終端可以免費供樣,支持BOM配單!
 詢價
PHILPS
08+
5000
普通
 詢價
PHILIPS
21+
TO-263
30490
原裝現(xiàn)貨庫存
 詢價
NXP/恩智浦
23+
TO-263
10000
公司只做原裝正品
 詢價
NXP/恩智浦
2022+
SOT-263
12888
原廠代理 終端免費提供樣品
 詢價
PHILIPS
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價
更多PHB10N40供應(yīng)商 更新時間2024-10-26 11:04:00

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