PHB18NQ10T中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

? Higher operating power due to low

thermal resistance

? Low conduction losses due to low

on-state resistance

? Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

? DC-to-DC converters ? Switched-mode power supplies