PHK13N03LT中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Simple gate drive required due to low

gate charge

Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

DC-to-DC convertors

Lithium-ion battery applications

Notebook computers

Portable equipment