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PHP18N20E

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP18NQ10T

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.tod.c.converters ?switchedmodepowers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP18NQ10T

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits H

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PHP18NQ10T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP18NQ11T

isc N-Channel MOSFET Transistor

·DESCRIPTION ·DrainCurrentID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=110V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Generalpurposepoweramplifier

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP18NQ11T

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits H

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PHP18NQ20T

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP18NQ20T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP191NQ06LT

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology

Description LogiclevelN-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC-to-DCconverters ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP191NQ06LT

N-channel TrenchMOS logic level FET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    PHP

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High Power Thin Film Wraparound Chip Resistor

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TI/德州儀器
PHPISOT325
ON
30000
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MINI
24+
NA
2383
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HammondManufacturing
新
6
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NXP/恩智浦
22+
TO220
9000
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NEXPERIA
1809+
SOT1023
3675
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NEXPERIA/安世
24+
NA
800
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PHILIPS/飛利浦
21+
TO-220
9852
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PHI
TSSOP1
99+
37
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Nexper
21+
25000
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MINI
10+
DIP8
6698
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更多PHP供應(yīng)商 更新時(shí)間2025-4-6 10:26:00

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