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PHP101NQ03LT

N-channel TrenchMOS logic level FET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHP101NQ03LT

TrenchMOS logic level FET

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP101NQ03LTinSOT78(TO-220AB) PHU101NQ03LTinSOT533(I-PAK) Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP101NQ03LT

N-channel TrenchMOS logic level FET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconductio

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PHP101NQ03LT

N-Channel 30-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHB101NQ03LT

TrenchMOS??logiclevelFET

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD101NQ03LT

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits ?Low

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHD101NQ03LT

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconductio

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PHD101NQ03LT

TrenchMOS??logiclevelFET

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHU101NQ03LT

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHU101NQ03LT

N-channelTrenchMOSlogiclevelFET

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PHU101NQ03LT

TrenchMOSlogiclevelFET

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP101NQ03LTinSOT78(TO-220AB) PHU101NQ03LTinSOT533(I-PAK) Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào)：

    PHP101NQ03LT

  • 功能描述：

    MOSFET RAIL MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PHNXP
17+
SOT78TO-220AB
31518
原裝正品 可含稅交易
 詢價(jià)
PH
24+
SOT78TO-220AB
8866
詢價(jià)
NXP
16+
NA
8800
誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
NXP
1715+
SOP
251156
只做原裝正品現(xiàn)貨假一賠十!
 詢價(jià)
NXP
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
NXP
18+
TO-220
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
NXP
10+
MA
6000
絕對(duì)原裝自己現(xiàn)貨
 詢價(jià)
NXP
20+
TO220
32970
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
NXP
2020+
TO220
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
PHILIPS/飛利浦
2022+
12500
全新原裝 貨期兩周
 詢價(jià)
更多PHP101NQ03LT供應(yīng)商 更新時(shí)間2024-11-1 14:00:00

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