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PJU12P06

60V P-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@-10V,ID@-6A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJU12P06

isc P-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PJU12P06_T0_00001

Marking：U12P06；Package：TO-251AA；60V P-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@-10V,ID@-6A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

G12P06K

P-ChannelEnhancementModePowerMOSFET

Description TheG12P06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

MTM12P06

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTM12P06

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM12P06

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP12P06

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP12P06

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP12P06

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Hammond
2020+
N/A
155
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Hammond
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155
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5
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1
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更多PJU12P06供應(yīng)商 更新時(shí)間2025-3-1 10:18:00

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