| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PKN170AB | Glass passiated junction | SPSEMIStarHope 瞬雷電子上海瞬雷科技有限公司 | SPSEMI | |
Glasspassiatedjunction | SPSEMIStarHope 瞬雷電子上海瞬雷科技有限公司 | SPSEMI | ||
SinglePoleOptoMOSRelay Description ThePLA170isa1-Form-ASolidStateRelaywhichusesopticallycoupledMOSFETtechnologytoprovideenhancedinput-to-outputisolationof3750Vrms.TheefficientMOSFETswitchesandphotovoltaicdieuseClare’spatentedOptoMOS?architecture. Features ?100SolidState ?Small6 | Clare Clare, Inc. | Clare | ||
Single-Pole,NormallyOpenOptoMOSRelay Description PLA170isasingle-pole,normallyopen(1-Form-A)SolidStateRelaythatusesopticallycoupledMOSFETtechnologytoprovideanenhancedinput-to-outputisolationof3750Vrms. Itsopticallycoupledoutputs,whichusethepatentedOptoMOSarchitecture,arecontrolledbyahighlyeffic | IXYS IXYS Corporation | IXYS | ||
SinglePoleOptoMOSRelay Description ThePLA170isa1-Form-ASolidStateRelaywhichusesopticallycoupledMOSFETtechnologytoprovideenhancedinput-to-outputisolationof3750Vrms.TheefficientMOSFETswitchesandphotovoltaicdieuseClare’spatentedOptoMOS?architecture. Features ?100SolidState ?Small6 | Clare Clare, Inc. | Clare | ||
Single-Pole,NormallyOpenOptoMOSRelay Description PLA170isasingle-pole,normallyopen(1-Form-A)SolidStateRelaythatusesopticallycoupledMOSFETtechnologytoprovideanenhancedinput-to-outputisolationof3750Vrms. Itsopticallycoupledoutputs,whichusethepatentedOptoMOSarchitecture,arecontrolledbyahighlyeffic | IXYS IXYS Corporation | IXYS | ||
SinglePoleOptoMOSRelay Description ThePLA170isa1-Form-ASolidStateRelaywhichusesopticallycoupledMOSFETtechnologytoprovideenhancedinput-to-outputisolationof3750Vrms.TheefficientMOSFETswitchesandphotovoltaicdieuseClare’spatentedOptoMOS?architecture. Features ?100SolidState ?Small6 | Clare Clare, Inc. | Clare | ||
Single-Pole,NormallyOpenOptoMOSRelay Description PLA170isasingle-pole,normallyopen(1-Form-A)SolidStateRelaythatusesopticallycoupledMOSFETtechnologytoprovideanenhancedinput-to-outputisolationof3750Vrms. Itsopticallycoupledoutputs,whichusethepatentedOptoMOSarchitecture,arecontrolledbyahighlyeffic | IXYS IXYS Corporation | IXYS | ||
N-channelenhancementmodeverticalD-MOStransistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT23envelope.DesignedforuseasaSurfaceMountedDevice(SMD)inthinandthick-filmcircuitswithapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-s | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelenhancementmodefield-effecttransistor 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?1technology. Productavailability: PMBF170inSOT23. 2.Features nTrenchMOS?technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage. 3.Applica | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE | SUNMATE | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORSTAND-OFFVOLTAGE-5.0TO190Volts | SPSEMIStarHope 瞬雷電子上海瞬雷科技有限公司 | SPSEMI | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE Features Forsurfacemountedapplications Lowprofilepackage clampingcapability cycle):0.01 Hightemperaturesolderingguaranteed: 260℃/10seconds,atterminals 200Wpeakpulsepowercapabilitywitha10/1000μ Lowincrementalsurgeresistance,excellent s wavefrom,repetitionrate | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE | SUNMATE | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORSTAND-OFFVOLTAGE-5.0TO190Volts | SPSEMIStarHope 瞬雷電子上海瞬雷科技有限公司 | SPSEMI | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE Features Forsurfacemountedapplications Lowprofilepackage clampingcapability cycle):0.01 Hightemperaturesolderingguaranteed: 260℃/10seconds,atterminals 200Wpeakpulsepowercapabilitywitha10/1000μ Lowincrementalsurgeresistance,excellent s wavefrom,repetitionrate | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
20V,1AP-channelTrenchMOSFET | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
20V,1AP-channelTrenchMOSFET 1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaSOT323(SC-70)smallSurface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?LowRDSon ?Veryfastswitching ?TrenchMOSFETtechnology 3.Applications ?Re | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
20V,singleN-channelTrenchMOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
20V,singleN-channelTrenchMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Ericsson |
24+ |
2173 |
公司大量全新正品 隨時可以發(fā)貨 |
詢價 | |||
Ericsson |
2015 |
模塊 |
300 |
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！ |
詢價 | ||
ERICSSON |
2016+ |
DCDC |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ERICSSON |
DCDC |
10265 |
提供BOM表配單只做原裝貨值得信賴 |
詢價 | |||
ERICSSON/愛立信 |
22+ |
DCDC |
8650 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
ERICSSON/愛立信 |
22+ |
DCDC |
50000 |
只做正品原裝,假一罰十,歡迎咨詢 |
詢價 | ||
ERICSSON/愛立信 |
24+ |
DCDC |
10000 |
全新原裝現(xiàn)貨庫存 |
詢價 | ||
ERICSSON |
23+ |
N/A |
10000 |
只有原裝 |
詢價 | ||
ERICSSON |
23+ |
DCDC |
50000 |
只做原裝正品 |
詢價 | ||
ERICSSON/愛立信 |
23+ |
DCDC |
320000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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