首頁 >PPMR0016B>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PPMR0016B | 包裝:散裝 類別:標(biāo)簽,標(biāo)志,護(hù)欄,標(biāo)識(shí) 標(biāo)簽,貼紙,貼標(biāo) - 預(yù)印 描述:PIPE MRKR,NON-POTABLE WTR,30FT,R | PANDUITPanduit Corp Panduit公司Panduit科技有限公司 | PANDUIT | |
PPMR0016B | 包裝:散裝 類別:標(biāo)簽,標(biāo)志,護(hù)欄,標(biāo)識(shí) 標(biāo)簽,貼紙,貼標(biāo) - 預(yù)印 描述:PIPE MRKR,NON-POTABLE WTR,30FT,R | PANDUITPanduit Corp Panduit公司Panduit科技有限公司 | PANDUIT | |
GateDriverICforIGBTsandSiCMOSFETs 1.Description TheRAJ2930004AGMisagatedriverICforIGBTandSiCMOSFETgate-driveinhighvoltageinverter applications.Integrated3750Vrmsmicro-isolatorsprovidedatatransferwithhighvoltageisolationbetween theprimarycircuit(MCUside)andthesecondarycircuit(IGBTside).Ina | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-Ch100VFastSwitchingMOSFETs | UPI uPI Semiconductor Corp | UPI | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Ch100VFastSwitchingMOSFETs | UPI uPI Semiconductor Corp | UPI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-Channel100V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?ExtremelyLowQgdforSwitchingLosses ?100RgTested ?100AvalancheTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
13.75–14.5GHz15WattGaNPowerAmplifier ProductOverview Qorvo'sQPA0016isahighpower,packagedKu-Band MMICamplifierfabricatedusingQorvo'sproduction0.15 umGaN-on-SiCprocess(QGaN15).TheQPA0016targets the13.75-14.5GHzSatcombandwhileproviding5-Watts oflinearpowerwiththird-orderintermodulationdistortion pr | QORVO Qorvo, Inc | QORVO | ||
13.75–14.5GHz15WattGaNPowerAmplifier ProductOverview Qorvo'sQPA0016isahighpower,packagedKu-Band MMICamplifierfabricatedusingQorvo'sproduction0.15 umGaN-on-SiCprocess(QGaN15).TheQPA0016targets the13.75-14.5GHzSatcombandwhileproviding5-Watts oflinearpowerwiththird-orderintermodulationdistortion pr | QORVO Qorvo, Inc | QORVO | ||
DiagnosticModesforQTICs | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | Atmel | ||
QTCMcalibrationmanifoldbody,brass | RALSTON Ralston Instruments. | RALSTON | ||
DIGITALCONTROLLEDVARIABLEGAINAMP50TO1000MHZ,6BIT0.5DBLSBCONTROL | RFMD RF Micro Devices | RFMD | ||
DIGITALCONTROLLEDVARIABLEGAINAMP50TO1000MHZ,6BIT0.5DBLSBCONTROL | RFMD RF Micro Devices | RFMD | ||
DIGITALCONTROLLEDVARIABLEGAINAMP50TO1000MHZ,6BIT0.5DBLSBCONTROL | RFMD RF Micro Devices | RFMD | ||
ANALOGCONTROLLEDVARIABLEGAINAMPLIFIER400MHzTO2810MHz | RFMD RF Micro Devices | RFMD | ||
ANALOGCONTROLLEDVARIABLEGAINAMPLIFIER400MHzTO2810MHz | RFMD RF Micro Devices | RFMD | ||
ANALOGCONTROLLEDVARIABLEGAINAMPLIFIER400MHzTO2810MHz | RFMD RF Micro Devices | RFMD |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
PPMR0016B
- 制造商:
Panduit Corp
- 類別:
標(biāo)簽,標(biāo)志,護(hù)欄,標(biāo)識(shí) > 標(biāo)簽,貼紙,貼標(biāo) - 預(yù)印
- 包裝:
散裝
- 描述:
PIPE MRKR,NON-POTABLE WTR,30FT,R
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Panduit Corp |
2010+ |
N/A |
66 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) | ||
SAMSUNG/三星 |
24+23+ |
QFN |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價(jià) | ||
SAMSUNG/三星 |
23+ |
NA/ |
2500 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
PND |
24+ |
14 |
詢價(jià) |
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