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PS11032

Intellimod??Module Application Specific IPM (4 Amperes/600 Volts)

INTEGRATEDFUNCTIONSANDFEATURES ?Converterbridgefor3phaseAC-to-DCpowerconversion. ?3phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCONTROLFUNCTIONS: ?P-SideIGBTs:Drivecircuit,high-level-s

POWEREX

Powerex Power Semiconductors

PS11032

Patch Lead - CAT 5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

PS11032

包裝：管件 封裝/外殼：30-PowerDIP 模塊（1.996"，50.70mm） 類別：分立半導(dǎo)體產(chǎn)品 功率驅(qū)動(dòng)器模塊 描述：MOD IPM 3PHASE IGBT 600V 4A

Powerex Inc.Powerex, Inc

鑫鴻鑫鴻電子

11032

PVCandNylonLEDSpacers

HeycoHeyco.

海科?？?Heyco)

IJ11032H

EMI/EMCFILTER

Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo

DIT

DONG IL TECHNOLOGY LTD.

IJ11032S

EMI/EMCFILTER

Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo

DIT

DONG IL TECHNOLOGY LTD.

MJ11032

COMPLEMENTARYDARLINGTONPOWERTRANSISTOR

FEATURES ?HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A ?CURVESTO100A(Pulsed) ?DIODEPROTECTIONTORATEDIC ?MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR ?JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

MJ11032

NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

MJ11032

POWERTRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJ11032

COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS

High?CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain?hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11032

50AMPERECOMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS60.120VOLTS300WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A(Pulsed) ?

Motorola

Motorola, Inc

MJ11032

High-CurrentComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11032

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A ?ComplementtoTypeMJ11033 APPLICATIONS ?Designedforuseasoutputdevicesincomplementary generalpurposeamplifierapplica

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MJ11032

High??urrentComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11032

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A ?ComplementtothePNPMJ11033 APPLICATIONS ?Designedforuseasoutputdevicesincomplementary generalpurposeamplifierappl

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

MJ11032

High-CurrentComplementarySiliconPowerTransistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc ?Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJ11032G

High-CurrentComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11032G

High??urrentComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SPLA11032

Pushbuttonswitch,sideactuation,illumination

APEX-ELECTRONICS

Apex Electronics Co., Ltd

SPNA11032

Pushbuttonswitch,sideactuation,illumination

APEX-ELECTRONICS

Apex Electronics Co., Ltd

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    PS11032

  • 制造商：

    Powerex Inc.

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 功率驅(qū)動(dòng)器模塊

  • 系列：

    Intellimod?

  • 包裝：

    管件

  • 類型：

    IGBT

  • 配置：

    3 相

  • 電壓 - 隔離：

    2500VDC

  • 安裝類型：

    通孔

  • 封裝/外殼：

    30-PowerDIP 模塊（1.996"，50.70mm）

  • 描述：

    MOD IPM 3PHASE IGBT 600V 4A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
三凌
23+
55
詢價(jià)
MITSUBISHI/三菱
23+
1688
房間現(xiàn)貨庫(kù)存:QQ:373621633
 詢價(jià)
MITSUBISHI/三菱
15+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
 詢價(jià)
MITSUBIS
23+
模塊
350
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
PowerexInc
2022
30-DIP模塊
58
原廠原裝正品,價(jià)格超越代理
 詢價(jià)
三凌
23+
模塊
3562
詢價(jià)
PowerexInc
23+
MODIPM3PHASEIGBT600V4A
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
三菱
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
MITSUBISHI
MODULE
17462
只做原裝貨值得信賴
 詢價(jià)
MITSUBISHI
2020+
MODULE
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
更多PS11032供應(yīng)商 更新時(shí)間2024-11-7 16:21:00

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