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PSC0665K中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

PSC0665K
廠商型號

PSC0665K

功能描述

650 V, 6 A SiC Schottky diode in TO-220-2 R2P

絲印標識

PSC0665K

封裝外殼

TO-220-2

文件大小

233.91 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Nexperia B.V. All rights reserved
企業(yè)簡稱

NEXPERIA安世

中文名稱

安世半導體(中國)有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-9 19:00:00

PSC0665K規(guī)格書詳情

1. General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in

a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. The product offers temperature

independent capacitive turn-off, zero recovery switching behavior combined with an outstanding

figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness

expressed in a high IFSM.

2. Features and benefits

? Zero forward and reverse recovery

? Reduced system costs

? Temperature independent fast and smooth switching performance

? Outstanding figure-of-merit (Qc x VF)

? High IFSM capability

? High power density

? System miniaturization

? Reduced EMI

3. Applications

? Switch Mode Power Supply (SMPS)

? AC-DC and DC-DC converter

? Battery charging infrastructure

? Server and telecom power supply

? Uninterruptible Power Supply (UPS)

? Photovoltaic inverters

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