PSC1065H中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated

in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package

offers temperature independent capacitive turn-off, zero recovery switching behavior combined

with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the

robustness expressed in a high IFSM.

2. Features and benefits

? Zero forward and reverse recovery

? Temperature independent fast and smooth switching performance

? Outstanding figure-of-merit (Qc x VF)

? High IFSM capability

? High power density

? Reduced system cost

? System miniaturization

? Reduced EMI

3. Applications

? Switch Mode Power Supply (SMPS)

? AC-DC and DC-DC converter

? Battery charging infrastructure

? Server and telecom power supply

? Uninterruptible Power Supply (UPS)

? Photovoltaic inverters