PSC2065J中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated

in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package

offers temperature independent capacitive turn-off, zero recovery switching behavior combined

with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the

robustness expressed in a high IFSM.

Features and benefits

? Zero forward and reverse recovery

? Temperature independent fast and smooth switching performance

? Outstanding figure of merit (Qc

x VF)

? High IFSM capability

? High power density

? Reduced system costs

? System miniaturization

? Reduced EMI

Applications

? Switch mode power Supply (SMPS)

? AC-DC and DC-DC converter

? Battery charging infrastructure

? Server and telecom power supply

? Uninterruptible power supply (UPS)

? Photovoltaic inverters