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PSM20N60PT

20A 600V Single N-Channel Power MOSFET

PFC

PFC Device Inc.

RLBGB20N60

IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLFGB20N60CT

N-CHANNELIGBT

FEATURES ?Lowgatecharge ?TrenchFSTechnology, ?saturationvoltage:VCE(sat),typ=1.6V,IC=20AandTC=25°C APPLICATIONS ?Generalpurposeinverters ?UPS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLGB20N60CT

IGBT

Features ?600V,20A ?VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS,

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLPGB20N60CT

IGBT

Features ?600V,20A ?VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UP

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLTPGB20N60CT

N-CHANNELIGBT

APPLICATIONS ?Generalpurposeinverters ?UPS FEATURES ?Lowgatecharge ?TrenchFSTechnology, ?Saturationvoltage:VCE(sat),typ=1.85VIC=20AandTC=25°C

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RM20N60LD

N-ChannelEnhancementModePowerMOSFET

RECTRON

Rectron Semiconductor

RM20N60LDV

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

RECTRON

Rectron Semiconductor

RMD20N60DF

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

RECTRON

Rectron Semiconductor

RMD20N60DFV

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

RECTRON

Rectron Semiconductor

SD20N60

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SD20N60

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SFF20N60B

20AMP600Volts0.35ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF20N60M

20AMP/600Volts0.40ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF20N60N

20AMP/600Volts0.40ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF20N60P

20AMP/600Volts0.40ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SGB20N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB20N60

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistributio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGH20N60RUF

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH20N60RUFD

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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TW
23+
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