PSMN1R0-40YLD

Marking：1D040L；Package：LFPAK56；N-channel 40 V, 1.1 m廓, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

PSMN1R0-40YLD_15

N-channel 40 V 1.1 m廓 logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

PSMN1R0-40YLD/1X

包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：DIODE ARRAY SCHOTTKY

Nexperia USA Inc.

PSMN1R0-40SSH

N-channel40V,1mΩ,325Ampscontinuous,standardlevelMOSFETinLFPAK88usingNextPowerS3Technology

1.Generaldescription 325Ampcontinuouscurrent,standardlevelgatedrive,N-channelenhancementmodeMOSFET inLFPAK88package.NextPowerS3familyusingNexperia’sunique“SchottkyPlus”technology delivershighefficiencyandlowspikingperformanceusuallyassociatedwithMOSFETswith an

PSMN1R0-40ULD

N-channel40V,1.1mΩ,280AlogiclevelMOSFETinSOT1023AenhancedpackageforUL2595,usingNextPower-S3Schottky-Plustechnology

1.Generaldescription SOT1023AwithimprovedcreepageandclearancetomeetUL2595requirements280Amp,logic levelgatedriveN-channelenhancementmodeMOSFETin150°CLFPAK56packageusing advancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedandqualifiedfor high

PSMN1R0-40YSH

N-channel40V,1mΩ,290AstandardlevelMOSFETinLFPAK56EusingNextPower-S3Schottky-Plustechnology

1.Generaldescription 290Amp,standardlevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56E packageusingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesigned andqualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits ?