PSMN1R1-50SLH中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance industrial applications.

2. Features and benefits

? 280 Amp continuous current capability

? LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,

optimum soldering and easy solder-joint inspection

? Copper-clip and solder die attach for low package inductance and resistance, and high ID(max)

rating

? Ideal replacement for D2PAK and 10 x 12 mm leadless package types

? Qualified to 175 °C

? Avalanche rated, 100 tested

? Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

? Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for

low EMI designs

? Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

? Narrow VGS(th) rating for easy paralleling and improved current sharing

? Very strong linear-mode / safe operating area characteristics for safe and reliable switching at

high-current conditions

3. Applications

? Brushless DC motor control

? Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

? Battery protection and Battery Management Systems (BMS)

? Load switch

? 10 cell lithium-ion battery applications (36 V ? 42 V)